1 power transistors 2sC5294, 2sC5294a silicon npn triple diffusion mesa type for horizontal deflection output n features l high breakdown voltage, and high reliability through the use of a glass passivation layer l high-speed switching l wide area of safe operation (aso) n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current base current collector power dissipation junction temperature storage temperature symbol v cbo v ces v ceo v ebo i cp i c i b p c t j t stg ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 C55 to +150 unit v v v v a a a w ?c ?c 2sC5294 2sC5294a 2sC5294 2sC5294a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency storage time fall time symbol i cbo i ebo h fe v ce(sat) v be(sat) f t t stg t f conditions v cb = 1000v, i e = 0 v cb = 1500v, i e = 0 v cb = 1600v, i e = 0 v eb = 5v, i c = 0 v ce = 5v, i c = 10a i c = 10a, i b = 2.8a i c = 10a, i b = 2.8a v ce = 10v i c = 12a, i b1 = 2.4a, i b2 = C4.8a min 5 typ 3 1.5 0.12 max 50 50 1 1 50 12 3 1.5 2.5 0.2 unit m a ma m a v v mhz m s m s 2sC5294 2sC5294a 2sC5294 2sC5294a unit: mm 1:base 2:collector 3:emitter topC3e full pack package 15.5 0.5 26.5 0.5 22.0 0.5 23.4 18.6 0.5 3.3 0.3 5.5 0.3 2.0 0.7 0.1 2.0 2.0 1.2 10.0 3.0 0.3 f 3.2 0.1 4.5 5.45 0.3 123 5.45 0.3 1.1 0.1 2.0 0.2 4.0 5 5 5 5 5 5 0.7 0.1
2 power transistors 2sC5294, 2sC5294a p c ta area of safe operation (aso) area of safe operation, horizontal operation aso 0 160 40 120 80 140 20 100 60 0 250 200 150 100 50 (1) t c =ta (2) with a 100 100 2mm al heat sink (p c =12w) (3) without heat sink (p c =3.5w) (2) (3) (1) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 1 10 100 1000 3 30 300 0.001 0.01 0.1 1 100 10 10ms 1ms t=100 s dc i cp i c non repetitive pulse t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 2000 500 1500 1000 0 50 40 30 20 10 <1ma 2sC5294 2sC5294a f=64khz, t c <90?c area of safe operation with respect to the single pulse overload curve at the time of switching on, shutting down by the high voltage spark, holding down and like that, during horizontal operation. collector to emitter voltage v ce ( v ) collector current i c ( a )
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